浙江大学杭州国际科创中心2020年青年人才卓越计划
-宽禁带半导体材料与器件专项

发布时间:2020-03-30 截止时间:长期 工作地点:浙江省杭州市

浙江大学杭州国际科创中心(以下简称杭州科创中心)是新时代杭州市与浙江大学深化全面战略合作的重大项目。杭州科创中心聚焦物质科学、信息科学、生命科学的会聚融通,推动在微纳尺度下多学科交叉的颠覆性技术革命,支撑引领未来高端制造和未来产业发展,打造长三角一体化发展的重要创新极,成为具有世界声誉的国际化创新生态区和杰出人才汇聚地。为打造一流的人才队伍,杭州科创中心现向全球发布"青年人才卓越计划",首批启动"宽禁带半导体材料与器件"专项,欢迎优秀青年才俊加盟。

"青年人才卓越计划-宽禁带半导体材料与器件"专项依托杭州科创中心先进半导体研究院实施,研究院聚焦宽禁带半导体领域的国际前沿和重大科学问题,瞄准国家在信息、能源等领域的重大战略需求,依托长三角区域领先的产业优势、浙江大学雄厚的科研实力和杭州科创中心创新的体制机制,打造一个国内领先、国际先进的前沿技术创新研发平台,推动产学研深度融合发展。研究院由杭州科创中心首席科学家杨德仁院士牵头建设,研究院学术委员会主任由郑有炓院士担任,研究院院长由国家杰出青年基金获得者、长江学者盛况教授担任,并拥有一支包括国家特聘专家、卓青、优青等在内的学术带头人队伍领衔开展宽禁带材料与器件相关方向的科学研究。研究院将集中建设超净实验室和宽禁带半导体材料生长、芯片研制、封装测试及应用的先进研发设施和大型仪器设备。

一、拟重点引进方向

1、宽禁带半导体材料(GaN、SiC、Si基III-V、Ga2O3、Diamond、AlN等);

2、宽禁带半导体器件(基于SiC、GaN等材料的功率器件、射频器件和芯片集成技术);

3、封装测试(功率器件、射频器件及其他器件相关的封装、模块集成和测试应用技术)。

二、待遇及保障条件

1、提供有竞争力的薪酬保障(一人一议);

2、为入选者及其团队成员提供人才公寓,符合条件者可享受杭州科创中心人才房政策;

3、优先使用研究院科研平台大型仪器设备,并另外提供3年500万元以上的科研资助(可持续滚动资助);

4、提供150㎡以上独立物理空间;

5、提供"专人一站式"服务;

6、入选者中科研业绩突出且符合浙江大学人才标准的,可双聘至浙江大学;

7、享受省市区各类政策配套。

三、申报条件

1、具有远大学术志向、创新精神、较强科研能力和社会责任感;

2、年龄原则上不超过35周岁;

3、在国内外顶尖高校或知名研究机构获得博士学位;

4、对宽禁带半导体材料与器件研究领域有足够的学科背景支持和较好的研究积累与想法,有坚实的专业基础和较深的学术造诣;

5、具备以独立PI开展研究工作的能力;

6、有宽禁带材料与器件领域院士或国际知名专家推荐的,优先入选。

四、联系方式

联系人:陈老师、顾老师

电话:+86-571-82359123

邮箱:yufeibo@zju.edu.cn,邮件标题注明:应聘岗位+本人姓名+学位+毕业学校+所学专业+高校人才网

地址:浙江省杭州市萧山区建设三路733号 浙江大学杭州国际科创中心

附件1:浙江大学杭州国际科创中心青年人才卓越计划简介

附件2:浙江大学杭州国际科创中心青年人才卓越计划申报表


ZJU-Hangzhou Global Scientific and Technological Innovation Center Recruitment Program for "Young Talent Plan"
- Recruiting Researchers in Wide-Bandgap Semiconductors

ZJU-Hangzhou Global Scientific and Technological Innovation Center (HIC) is a world-class and future-oriented R&D center, jointly established by Zhejiang University and Hangzhou government. HIC's mission is to build an open and integrated international innovation hub that integrates the material sciences, information sciences, and life sciences in the Yangtze River Delta region.

To build a world-class research team, the HIC has launched a new recruitment program: "Young Talent Plan".

Advanced Semiconductor Research Institute is an innovative research platform at HIC. The institute has advanced cleanroom facilities in the area of wide-bandgap semiconductor materials, device and integrated circuit fabrication, and packaging and testing. Supported by the abudant industry resources in the Yangtze River Delta region, and the R&D capabilities of Zhejiang University, the Institute aims to become a world-class innovation platform and ecosystem.

1. Research Areas

1) Wide-bandgap semiconductor materials (GaN, SiC, Si-based III-V, Ga2O3, Diamond, AlN, etc.).

2) Wide-bandgap semiconductor devices (power devices, RF devices and integrated circuits based on SiC, GaN and other materials).

3) Packaging and testing technology (IC Packaging, module integration and testing technologies related to power devices, RF devices and other devices).

2. Working environment, salary and benefits

1) Competitive salary, discussed individually.

2) Housing benefits.

3) Start-up research funding of minimum 5 million yuan for 3-years (with possible continuation).

4) Minimum 150 m2 lab space.

5) One-stop full-range administrative support service.

6) If qualified, can be jointly employed as a dual-appointment faculty member in Zhejiang University.

7) Various provincial and municipal talent policies.

3. Qualifications

1) Strong research background, strong motivation in academic/technological career.

2) Less than 35 years of age.

3) Have a Ph.D. degree awarded by well-known universities overseas or domestic top universities.

4) Have solid academic background in the field of wide-bandgap semiconductor materials and devices.

5) Have the ability to conduct research work independently as PI.

6) Recommendation letters by academicians in the field of wide-bandgap materials and devices or internationally renowned experts will be considered in recruiting process.

Contact: Mr. Chen, Ms. Gu

Tel.: + 86-571-82359123

Email: yufeibo@zju.edu.cn

Address: ZJU-Hangzhou Global Scientific and Technological

附件1:Introduction of Young Talent Plan Program

附件3:The Application Form of Young Talent Plan Program

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